1 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. www.intersil.com or 407-727-9207 | copyright ? intersil corporation 1999 satellite applications flow? (saf) is a trademark of intersil corporation. hs-26ct31rh-t radiation hardened quad differential line driver intersils satellite applications flow? (saf) devices are fully tested and guaranteed to 100krad total dose. these qml class t devices are processed to a standard ?ow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. the intersil hs-26ct31rh-t is a quad differential line driver designed for digital data transmission over balanced lines and meets the requirements of eia standard rs-422. radiation hardened cmos processing assures low power consumption, high speed, and reliable operation in the most severe radiation environments. the hs-26ct31rh-t accepts ttl inputs and converts them to rs-422 compatible outputs. this circuit uses special outputs that enable the drivers to power down without loading down the bus. enable and disable pins allow several devices to be connected to the same data source and addressed independently. speci?cations speci?cations for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed below must be used when ordering. detailed electrical specifications for the hs-26ct31rh-t are contained in smd 5962-95632. a hot-link is provided from our website for downloading . www.intersil.com/spacedefense/newsafclasst.asp intersils quality management plan (qm plan), listing all class t screening operations, is also available on our website. www.intersil.com/quality/manuals.asp features ? qml class t, per mil-prf-38535 ? radiation performance - gamma dose . . . . . . . . . . . . . . . . . . . . 1 x 10 5 rad(si) - seu and sel . . . . . . . . . . immune to 100mev/mg/cm 2 ? eia rs-422 compatible outputs (except for ios) ? ttl compatible inputs ? high impedance outputs when disabled or powered down ? low power dissipation 2.75mw standby (max) ? single 5v supply ? low output impedance 10 w or less ? full -55 o c to 125 o c military temperature range pinouts hs1-26ct31rh-t (sbdip), cdip2-t16 top view hs9-26ct31rh-t (flatpack), cdfp4-f16 top view ordering information ordering number part number temp. range ( o c) 5962r9563201tec hs1-26ct31rh-t -55 to 125 hs1-26c31rh/proto hs1-26c31rh/proto -55 to 125 5962r9563201txc HS9-26C31RH-t -55 to 125 HS9-26C31RH/proto HS9-26C31RH/proto -55 to 125 note: minimum order quantity for -t is 150 units through distribution, or 450 units direct. 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 ain ao a o enable bo bo gnd bin v dd do do enable co co cin din ain ao a o enable bo bo bin gnd 2 3 4 5 6 7 8 116 15 14 13 12 11 10 9 v dd din do do enable co co cin data sheet july 1999 file number 4590.1
2 functional diagram truth table device power on/off inputs output enable enable in out out on 0 1 x hi-z hi-z on 1 x 001 on x 0 001 on 1 x 110 on x 0 110 off (0v) x x x hi-z hi-z enable enable ain ao bin bo cin co din do do co bo a o hs-26ct31rh-t
3 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?cation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site http://www.intersil.com die characteristics die dimensions: 2450 m m x 4950 m m x 533 m m 25.4 m m (97 x 195 x 21mils 1mil) metallization: m1: mo/tiw thickness: 5800 ? m2: al/si/cu thickness: 10k ? 1k ? substrate potential: internally connected to v dd. may be left ?oating. backside finish: silicon passivation: type: sio 2 thickness: 8k ? 1k ? worst case current density: < 2.0e5 a/cm 2 transistor count: 285 process: radiation hardened cmos, avlsi metallization mask layout hs-26ct31rh (14) do (13) do (12) enable (11) co (10) co ao (2) a o (3) enable (4) bo (5) bo (6) bin (7) gnd (8) cin (9) gnd (8) (1) ain (16) v dd (15) din (16) v dd hs-26ct31rh-t
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